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2SK2700
Liên hệ
Datasheet :
Brand:
Toshiba
Transistor Polarity:
N-Channel
Vds – Drain-Source Breakdown Voltage:
900 V
Vgs – Gate-Source Breakdown Voltage:
30 V
Id – Continuous Drain Current:
3 A
Rds On – Drain-Source Resistance:
4.3 mOhms
Configuration:
Single
Pd – Power Dissipation:
400 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Channel Mode:
Enhancement
Fall Time:
6 ns
Rise Time:
25 ns
50