The K2010 series consist of an infrared emitting diode, optically coupled to a phototransistor detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
Current transfer ratio | ( CTR:Min. 60% at IF=2mA VCE=5V ) |
High isolation voltage between input and output | ( Viso:5000Vrms ) |