IC tản nhiệt IRF540

IRF540 – 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

V_DSS = 100V, R_DS(on) = 44mΩ, I_D = 33A

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize  advanced processing techniques to achieve extremely low on-resistance  per silicon area. This benefit, combined with the fast switching speed  and ruggedized device design that HEXFET power MOSFETs are well known  for, provides the designer with an extremely efficient and reliable  device for use in a wide variety of applications.

The TO-220 package is universally preferred for all  commercial-industrial applications at power dissipation levels to  approximately 50 watts. The low thermal resistance and low package cost  of the TO-220 contribute to its wide acceptance throughout the industry.