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Dây đai thít loại 3x100
1 × 0 ₫
IRF1104
45,000 ₫
SpecificationsDocuments (1)My NotesManufacturer:International RectifierProduct Category:MOSFETRoHS: Details Id – Continuous Drain Current:100 AVds – Drain-Source Breakdown Voltage:40 VRds On – Drain-Source Resistance:9 mOhmsTransistor Polarity:N-ChannelVgs – Gate-Source Breakdown Voltage:20 VQg – Gate Charge:62 nCMaximum Operating Temperature:+ 175 CPd – Power Dissipation:170 WMounting Style:Through HolePackage / Case:TO-220-3Packaging:TubeBrand:International Rectifier Channel Mode:Enhancement Configuration:Single Fall Time:19 ns Minimum Operating Temperature:- 55 C Rise Time:114 ns Factory Pack Quantity:50 Typical Turn-Off Delay Time:28 ns
| Manufacturer: | International Rectifier | |
| Product Category: | MOSFET | |
| RoHS: |  Details |
|
| Id – Continuous Drain Current: | 100 A | |
| Vds – Drain-Source Breakdown Voltage: | 40 V | |
| Rds On – Drain-Source Resistance: | 9 mOhms | |
| Transistor Polarity: | N-Channel | |
| Vgs – Gate-Source Breakdown Voltage: | 20 V | |
| Qg – Gate Charge: | 62 nC | |
| Maximum Operating Temperature: | + 175 C | |
| Pd – Power Dissipation: | 170 W | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-220-3 | |
| Packaging: | Tube | |
| Brand: | International Rectifier | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Fall Time: | 19 ns | |
| Minimum Operating Temperature: | – 55 C | |
| Rise Time: | 114 ns | |
| Factory Pack Quantity: | 50 | |
| Typical Turn-Off Delay Time: | 28 ns |
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