Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF5210S/L
P-Channel
Lead-Free
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Drain to Source Voltage (Vdss) | 100V |
Current – Continuous Drain (Id) | 38A |