IRF630NPBF

14,000 

MOSFET N-CH 200V 9.3A TO-220AB
Category
Discrete Semiconductor Products
Family
FETs – Single
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current – Continuous Drain (Id) @ 25° C
9.3A
Rds On (Max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) @ Vds
575pF @ 25V
Power – Max
82W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Packaging
Tube
Dynamic Catalog
N-Channel Standard FETs
Other Names
*IRF630NPBF
 
Datasheet…