IRF9540N

IRF9540: –100V Single P-Channel HEXFET Power MOSFET

VDSS = -100V, RDS(on) = 0.117W, ID = -23A

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced  processing techniques to achieve extremely low on-resistance per silicon  area. This benefit, combined with the fast switching speed and  ruggedized device design that HEXFET Power MOSFETs are well known for,  provides the designer with an extremely efficient and reliable device  for use in a wide variety of applications.

The TO-220 package is universally preferred for all  commercial-industrial applications at power dissipation levels to  approximately 50 watts. The low thermal resistance and low package cost  of the TO-220 contribute to its wide acceptance throughout the industry.