MOSFET N-CH 100V 120A TO-220AB
Category | Discrete Semiconductor Products |
---|---|
Family | FETs – Single |
Series | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current – Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
Power – Max | 370W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Packaging | Tube |
Dynamic Catalog | N-Channel Logic Level Gate FETs |