IRFR210 MOSFET transistor datasheet. Parameters and characteristics.
Name: IRFR210
Type of IRFR210 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 25W
Maximum drain-source voltage (Uds): 200V
Maximum drain-gate voltage (Udg):
Maximum gate-source voltage (Ugs): 10V
Maximum drain current (Id): 2.6A
Maximum junction temperature (Tj): 150�C
Rise Time of IRFR210 transistor (fr):
Drain-source Capacitance (Cd), pf:
Maximum drain-source on-state resistance (Rds), Om: 1.5
Manufacturer of IRFR210 transistor: IRF
Case of IRFR210 transistor: TO252AA
Application of IRFR210 transistor: