MEM2311

MEM2311SG Series Dual P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation .Datasheet  Package / Case
SOP8
Drain to Source Voltage (Vdss)
-30V
Current – Continuous Drain (Id)
-6A
FET Type
P-Channel MOSFET
Gate-Source Voltage
±20V
Pulsed Drain Current
-30A
Operating Temperature Range
150℃