MOSFET N-CH 60V 2.3A SOT23-3
Category | Discrete Semiconductor Products |
---|---|
Family | FETs – Single |
Series | TrenchFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current – Continuous Drain (Id) @ 25° C | 2.3A |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 6.8nC @ 10V |
Input Capacitance (Ciss) @ Vds | 190pF @ 30V |
Power – Max | 1.66W |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Packaging | Cut Tape (CT) |
Dynamic Catalog | N-Channel Logic Level Gate FETs |
Other Names | SI2308BDS-T1-GE3CT |