These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.Datasheet… FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Drain to Source Voltage (Vdss)
Current – Continuous Drain (Id)
Supplier Device Package