Manufacturer: | Diodes Incorporated | |
Product Category: | Bipolar Transistors – BJT | |
Configuration: | Single | |
Transistor Polarity: | NPN | |
Collector- Base Voltage VCBO: | 80 V | |
Collector- Emitter Voltage VCEO Max: | 65 V | |
Emitter- Base Voltage VEBO: | 6 V | |
Maximum DC Collector Current: | 0.1 A | |
Gain Bandwidth Product fT: | 300 MHz (Typ) | |
Maximum Operating Temperature: | + 150 C | |
Brand: | Diodes Incorporated | |
DC Collector/Base Gain hfe Min: | 110 at 2 mA at 5 V | |
Maximum Power Dissipation: | 500 mW | |
Minimum Operating Temperature: | – 65 C |
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