IRF5210PBF

15,000 

Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.  Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different fromIRF5210S/L P-Channel Lead-FreeDatasheet…  FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
100V
Current – Continuous Drain (Id)
38A