IRFB4110PBF

45,000 

MOSFET N-CH 100V 120A TO-220AB
Category
Discrete Semiconductor Products
Family
FETs – Single
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current – Continuous Drain (Id) @ 25° C
120A
Rds On (Max) @ Id, Vgs
4.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
210nC @ 10V
Input Capacitance (Ciss) @ Vds
9620pF @ 50V
Power – Max
370W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Packaging
Tube
Dynamic Catalog
N-Channel Logic Level Gate FETs
 
Datasheet…
 

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