MEM2311SG Series Dual P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation .
|Package / Case||SOP8|
|Drain to Source Voltage (Vdss)||-30V|
|Current – Continuous Drain (Id)||-6A|
|FET Type||P-Channel MOSFET|
|Pulsed Drain Current||-30A|
|Operating Temperature Range||150℃|