8,000 ₫
MEM2311SG Series Dual P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation .Datasheet Package / Case
SOP8
Drain to Source Voltage (Vdss)
-30V
Current – Continuous Drain (Id)
-6A
FET Type
P-Channel MOSFET
Gate-Source Voltage
±20V
Pulsed Drain Current
-30A
Operating Temperature Range
150℃
MEM2311SG Series Dual P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation .
| Package / Case | SOP8 |
| Drain to Source Voltage (Vdss) | -30V |
| Current – Continuous Drain (Id) | -6A |
| FET Type | P-Channel MOSFET |
| Gate-Source Voltage | ±20V |
| Pulsed Drain Current | -30A |
| Operating Temperature Range | 150℃ |
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