RD01MUS2-T113

17,800 

Datasheet :http://www.mitsubishielectric.com/semiconductors/content/product/hf/sirfpowermosfet/siliconrfdiscrete/siliconrfdiscrete_lv4/rd01mus2.pdf

 DESCRIPTION 
RD01MUS2 is a MOS FET type transistor specifically 
designed for VHF/UHF RF amplifiers applications. 
This device have an interal monolithic zener diode 
from gate to source for ESD protection. 
 
FEATURES 
•High power gain: 
 Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz 
•High Efficiency: 65%typ. 
•Integrated gate protection diode 
 

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