Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
| Package / Case | TO-220-3 |
| Transistor Type | NPN – Darlington |
| Current – Collector (Ic) (Max) | 10A |
| Collector- Emitter Voltage VCEO Max | 100V |
| DC Collector/Base Gain hfe Min | 1000 @ 5A, 4V |
