TIP142T
4,500 ₫
Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.Features■ Monolithic Darlington configuration■ Integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipmentDatasheet Package / Case
TO-220-3
Transistor Type
NPN – Darlington
Current – Collector (Ic) (Max)
10A
Collector- Emitter Voltage VCEO Max
100V
DC Collector/Base Gain hfe Min
1000 @ 5A, 4V
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
| Package / Case | TO-220-3 |
| Transistor Type | NPN – Darlington |
| Current – Collector (Ic) (Max) | 10A |
| Collector- Emitter Voltage VCEO Max | 100V |
| DC Collector/Base Gain hfe Min | 1000 @ 5A, 4V |
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