SI2308BDS-T1-GE3

14,000 ₫

MOSFET N-CH 60V 2.3A SOT23-3CategoryDiscrete Semiconductor ProductsFamilyFETs – SingleSeriesTrenchFET®FET TypeMOSFET N-Channel, Metal OxideFET FeatureLogic Level GateDrain to Source Voltage (Vdss)60VCurrent – Continuous Drain (Id) @ 25° C2.3ARds On (Max) @ Id, Vgs156 mOhm @ 1.9A, 10VVgs(th) (Max) @ Id3V @ 250µAGate Charge (Qg) @ Vgs6.8nC @ 10VInput Capacitance (Ciss) @ Vds190pF @ 30VPower – Max1.66WMounting TypeSurface MountPackage / CaseTO-236-3, SC-59, SOT-23-3Supplier Device PackageSOT-23-3 (TO-236)PackagingCut Tape (CT)Dynamic CatalogN-Channel Logic Level Gate FETsOther NamesSI2308BDS-T1-GE3CTDatasheet…

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Mô tả

MOSFET N-CH 60V 2.3A SOT23-3

Category	Discrete Semiconductor Products
Family	FETs – Single
Series	TrenchFET®
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current – Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	156 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) @ Vgs	6.8nC @ 10V
Input Capacitance (Ciss) @ Vds	190pF @ 30V
Power – Max	1.66W
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Packaging	Cut Tape (CT)
Dynamic Catalog	N-Channel Logic Level Gate FETs
Other Names	SI2308BDS-T1-GE3CT