BFT46,215

Manufacturer:
NXP

Product Category:
Transistors RF JFET

RoHS:
 Details
 

Brand:
NXP Semiconductors
 

Type:
Silicon

Transistor Polarity:
N-Channel

Vds – Drain-Source Breakdown Voltage:
25 V

Vgs – Gate-Source Breakdown Voltage:
– 25 V

Maximum Drain Gate Voltage:
25 V

Id – Continuous Drain Current:
10 mA

Pd – Power Dissipation:
250 mW

Maximum Operating Temperature:
+ 150 C

Mounting Style:
SMD/SMT

Package / Case:
SOT-23

Packaging:
Reel

Configuration:
Single
 

Drain-Source Current at Vgs=0:
0.2 mA to 1.5 mA
 

Gate-Source Cutoff Voltage:
1.2 V
 

Product:
RF JFET