BSM250D17P2E004

Model: BSM250D17P2E004
Manufacturer: Rohm Semiconductor
Description: Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module
ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

Datasheet

Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Configuration: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current – Continuous Drain (Id) @ 25°C: 250A (Tc)
Vgs(th) (Max) @ Id: 4V @ 66mA
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Power – Max: 1800W (Tc)
Fall Time: 70ns
Rise Time: 55ns
Typical Delay Time: 55ns
Typical Turn-Off Delay Time: 195ns
Typical Turn-On Delay Time: 55ns
Operating Temperature: -40°C ~ 150°C (TJ)
Unit Weight: 1.274lbs