BSS670S2L H6327

 
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current – Continuous Drain (Id) @ 25°C
540mA (Ta)
Rds On (Max) @ Id, Vgs
650 mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id
2V @ 2.7µA
Gate Charge (Qg) @ Vgs
2.26nC @ 10V
Input Capacitance (Ciss) @ Vds
75pF @ 25V
Power – Max
360mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23-3
 

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