HFP50N06

7,000 

HFP50N06 – 60V N-Channel MOSFETFEATURES
‰Originative New Design
‰Superior Avalanche Rugged Technology
‰Robust Gate Oxide Technology
‰Very Low Intrinsic Capacitances
‰Excellent Switching Characteristics
‰Unrivalled Gate Charge : 40 nC (Typ.)
‰Extended Safe Operating Area
‰Lower RDS(ON) : 0.018 Ω(Typ.) @VGS=10VDatasheet…

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