WFP630 – N-Channel MOSFETFeatures
■RDS(on)(Max 0.4 Ω)@VGS=10V
■Gate Charge (Typical 19nC)
■Improved dv/dt Capability, High Ruggedness
■100% Avalanche Tested
■Maximum Junction Temperature Range (150°C)General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor

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