Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applicationDatasheet
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power – Max
Drain to Source Voltage (Vdss)
Current – Continuous Drain (Id)
75A (Tc)
Voltage – Supply
6.5 mOhm @ 66A, 10V
Current – Peak
4V @ 250µA
Supplier Device Package
Gate-Source Voltage
110nC @ 10V