Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other application
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power – Max | 170W |
| Drain to Source Voltage (Vdss) | 55V |
| Current – Continuous Drain (Id) | 75A (Tc) |
| Voltage – Supply | 6.5 mOhm @ 66A, 10V |
| Current – Peak | 4V @ 250µA |
| Supplier Device Package | PAK |
| Gate-Source Voltage | 110nC @ 10V |
