IRF640N

8,500 

MOSFET N-CH 200V 18A TO-220AB
Category
Discrete Semiconductor Products
Family
FETs – Single
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current – Continuous Drain (Id) @ 25° C
18A
Rds On (Max) @ Id, Vgs
150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
67nC @ 10V
Input Capacitance (Ciss) @ Vds
1160pF @ 25V
Power – Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Packaging
Tube
Other Names
*IRF640N
 
Datasheet…
 

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