| Datasheets | NE856 Series |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | RF Transistors (BJT) |
| Series | – |
| Transistor Type | NPN |
| Voltage – Collector Emitter Breakdown (Max) | 12V |
| Frequency – Transition | 4.5GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz |
| Gain | 6.5dB ~ 12.5dB |
| Power – Max | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Current – Collector (Ic) (Max) | 100mA |
| Mounting Type | Surface Mount |
| Package / Case | SOT-523 |
| Supplier Device Package | 3-SuperMiniMold (19) |
| Dynamic Catalog | NPN RF Transistors |
| Other Names | NE85619-ACT |
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