NE85630-T1-A

Datasheets
NE856 Series
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)
Series

Transistor Type
NPN
Voltage – Collector Emitter Breakdown (Max)
12V
Frequency – Transition
4.5GHz
Noise Figure (dB Typ @ f)
1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6dB ~ 12dB
Power – Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 7mA, 3V
Current – Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Dynamic Catalog
NPN RF Transistors
Other Names
NE85630-ACT

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