NE85633-T1B-A

Datasheets
NE856 Series
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)
Series

Transistor Type
NPN
Voltage – Collector Emitter Breakdown (Max)
12V
Frequency – Transition
7GHz
Noise Figure (dB Typ @ f)
1.4dB ~ 2dB @ 1GHz
Gain
9dB
Power – Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 20mA, 10V
Current – Collector (Ic) (Max)
100mA
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Dynamic Catalog
NPN RF Transistors
Other Names
NE85633B-ACT

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