Model: NXH003P120M3F2PTHG
Manufacturer: onsemi
Description: Mosfet Array 1200V (1.2kV) 350A (Tc) 979W (Tc) Chassis Mount 36-PIM (56.7×62.8)
The NXH003P120M3F2PTHG is a power module containing 3 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 36-PIM (56.7×62.8)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current – Continuous Drain (Id) @ 25°C: 350A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Power – Max: 979W (Tc)
Fall Time: 16ns
Rise Time: 17ns
Typical Turn-Off Delay Time: 144ns
Typical Turn-On Delay Time: 49ns
Operating Temperature: -40°C ~ 175°C (TJ)
