SI2308BDS-T1-GE3

14,000 

MOSFET N-CH 60V 2.3A SOT23-3CategoryDiscrete Semiconductor ProductsFamilyFETs – SingleSeriesTrenchFET®FET TypeMOSFET N-Channel, Metal OxideFET FeatureLogic Level GateDrain to Source Voltage (Vdss)60VCurrent – Continuous Drain (Id) @ 25° C2.3ARds On (Max) @ Id, Vgs156 mOhm @ 1.9A, 10VVgs(th) (Max) @ Id3V @ 250µAGate Charge (Qg) @ Vgs6.8nC @ 10VInput Capacitance (Ciss) @ Vds190pF @ 30VPower – Max1.66WMounting TypeSurface MountPackage / CaseTO-236-3, SC-59, SOT-23-3Supplier Device PackageSOT-23-3 (TO-236)PackagingCut Tape (CT)Dynamic CatalogN-Channel Logic Level Gate FETsOther NamesSI2308BDS-T1-GE3CTDatasheet… 

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