Model: CGH31240F
Manufacturer: MACOM Technology Solutions
Description: 240W; 2700 – 3100MHz; 50 – ohm Input/Output Matched GaN HEMT for S – Band Radar Systems
The CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH31240F ideal for 2.7 –3.1-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Features:
– 2.7 – 3.1GHz Operation
– 12dB Power Gain
– 60% Power Added Efficiency
– <0.2dB Pulsed Amplitude Droop
CGH31240F.pdf
Technology: HEMT
Mounting Type: Chassis Mount
Package / Case: 440201
Frequency: 2.7GHz ~ 3.1GHz
Gain: 12dB
Efficiency: 60%
Voltage – Test: 28V
Current – Test: 1A
Power – Output: 250W
Voltage – Rated: 120V
Vds – Drain-Source Breakdown Voltage: 120V
Vgs – Gate-Source Breakdown Voltage: -10V to 2V
Vgs th – Gate-Source Threshold Voltage: -3V
Id – Continuous Drain Current: 24A
Pd – Power Dissipation: 345W
Operating Temperature: -40°C ~ 150°C
Dimension: 3.76 x 24.33 x 23.62mm (H x L x W)
Unit Weight: 1.132118oz
