9,100 ₫
DatasheetFeatures- Epitaxial Planar Die Construction- Ideal for Medium Power Amplification and Switching- High Collector Current Rating- Complementary Version Available (DPBT8105) – Lead Free By Design/RoHS Compliant (Note 1)- “Green Device”- Qualified to AEC-Q101 Standards for High Reliability Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Current – Collector (Ic) (Max)
1A
Collector- Emitter Voltage VCEO Max
60V
DC Collector/Base Gain hfe Min
100 @ 500mA, 5V
Maximum Power
600mW
Features
– Epitaxial Planar Die Construction
– Ideal for Medium Power Amplification and Switching
– High Collector Current Rating
– Complementary Version Available (DPBT8105)
– Lead Free By Design/RoHS Compliant (Note 1)
– “Green Device”
– Qualified to AEC-Q101 Standards for High Reliability
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Type | NPN |
| Current – Collector (Ic) (Max) | 1A |
| Collector- Emitter Voltage VCEO Max | 60V |
| DC Collector/Base Gain hfe Min | 100 @ 500mA, 5V |
| Maximum Power | 600mW |
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