IRF740 MOSFET transistor datasheet. Parameters and characteristics.
Name: IRF740
Type of IRF740 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 125W
Maximum drain-source voltage (Uds): 400V
Maximum drain-gate voltage (Udg): 400V
Maximum gate-source voltage (Ugs): 20V
Maximum drain current (Id): 10A
Maximum junction temperature (Tj): 150�C
Rise Time of IRF740 transistor (fr): 32/48
Drain-source Capacitance (Cd), pf: 1450
Maximum drain-source on-state resistance (Rds), Om: 0.550
Manufacturer of IRF740 transistor: STE
Case of IRF740 transistor: TO-220
Application of IRF740 transistor: ENHANCEMENT MODE POWER MOS
