IRF740

9,000 

               
 
IRF740 MOSFET transistor datasheet. Parameters and characteristics.
 
Name: IRF740
 
Type of IRF740 transistor: MOSFET
 
Type of control channel: N-Channel
 
Maximum power dissipation (Pd): 125W
 
Maximum drain-source voltage (Uds): 400V
 
Maximum drain-gate voltage (Udg): 400V
 
Maximum gate-source voltage (Ugs): 20V
 
Maximum drain current (Id): 10A
 
Maximum junction temperature (Tj): 150�C
 
Rise Time of IRF740 transistor (fr): 32/48
 
Drain-source Capacitance (Cd), pf: 1450
 
Maximum drain-source on-state resistance (Rds), Om: 0.550
 
Manufacturer of IRF740 transistor: STE
 
Case of IRF740 transistor: TO-220
 
Application of IRF740 transistor: ENHANCEMENT MODE POWER MOS

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