IRFR210

20,500 

 
IRFR210 MOSFET transistor datasheet. Parameters and characteristics.
 
Name: IRFR210
 
Type of IRFR210 transistor: MOSFET
 
Type of control channel: N-Channel
 
Maximum power dissipation (Pd): 25W
 
Maximum drain-source voltage (Uds): 200V
 
Maximum drain-gate voltage (Udg):
 
Maximum gate-source voltage (Ugs): 10V
 
Maximum drain current (Id): 2.6A
 
Maximum junction temperature (Tj): 150�C
 
Rise Time of IRFR210 transistor (fr):
 
Drain-source Capacitance (Cd), pf:
 
Maximum drain-source on-state resistance (Rds), Om: 1.5
 
Manufacturer of IRFR210 transistor: IRF
 
Case of IRFR210 transistor: TO252AA
 
Application of IRFR210 transistor:

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