TIP41C

5,800 

Description 
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode 
Application 
■ Linear and switching industrial equipmentDatasheet Package / Case
TO-220-3
Transistor Type
NPN
Current – Collector (Ic) (Max)
6A
Collector- Emitter Voltage VCEO Max
100V
DC Collector/Base Gain hfe Min
15 @ 3A, 4V

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